AON7406 Datasheet (PDF) 1.1. aon7406.pdf Size:270K _aosemi AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V • The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge
L6201 L6202 L6203 300 ns tfr Forward Recovery Time 200 ns LOGIC LEVELS VIN L,VEN L Input Low Voltage – 0.3 0.8 V VIN H,VEN H Input High Voltage 2 7 V IIN L,IEN L Input Low Current VIN,VEN = L –10 µA IIN H,IEN H Input High Current VIN,VEN =H 30 µA L6201 - L6202 - L6203 4/20 Home » Catalog » Transistors - FET. 2N5486 VHF/UHF N-Channel RF FET. Price: $0.55. Datasheet: 2N5486.pdf. 2N5486 N-Channel RF Transistor. versions, refer to the MAX5186/MAX5189 data sheet. Applications Signal Reconstruction of I and Q Transmit Signals Digital Signal Processing Arbitrary Waveform Generation (AWG) Imaging Features ♦ 2.7V to 3.3V Single-Supply Operation ♦ Wide Spurious-Free Dynamic Range: 70dB at fOUT = 2.2MHz ♦ Fully Differential Outputs for Each DAC ♦ ±0 ...
Catalog Datasheet MFG & Type PDF Document Tags; 2n7000+complement. Abstract: 2N7000 2n7000 darlington Text: L A B r 2N 7000 MOS POWER FET N-Channel Enhancement Mode APPLICATIONS â ¢ CMOS or TTL , Vo ltale Type Min. T yp . Home » Catalog » Transistors - FET. 2N5486 VHF/UHF N-Channel RF FET. Price: $0.55. Datasheet: 2N5486.pdf. 2N5486 N-Channel RF Transistor.
AON7406 Datasheet (PDF) 1.1. aon7406.pdf Size:270K _aosemi AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V • The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge PRODUCT SPECIFICATION RC4156/RC4157 2 Absolute Maximum Ratings (beyond which the device may be damaged)1 Notes: 1. Functional operation under any of these conditions is NOT implied.
N-Channel JFET Switch J111 - J113 / SST111 – SST113 ... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. Jun 26, 2017 · This part name is 30J124, GT30J124. The package is TO-220SIS. This product has Discrete 600V, 200A, IGBT functions. Manufacturers of product is Toshiba. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs. JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C Derate above = 25°C PD 350 2.8 mW mW/°C Junction Temperature Range ...
Marco Rubber Compound LM100-70 Fluorosilicone Datasheet Test Report Keywords marco, rubber, datasheet, test report, parker, dupont, kalrez, markez, LM100-70, Fluorosilicone Jun 18, 2019 · N4800LS Datasheet PDF - N-Channel MOSFET - Diodes, N4800LS pdf, N4800LS pinout, data, circuit, manual, substitute, parts, schematic, equivalent. Home » Catalog » Transistors - FET. 2N5486 VHF/UHF N-Channel RF FET. Price: $0.55. Datasheet: 2N5486.pdf. 2N5486 N-Channel RF Transistor. The IN line acts as the major current supply line, and is connected to the output N-Channel FET drain. Since there is no electrical connection (such as between the VCC pin and the ESD protection diode)required, IN operates independent of the input sequence. However, since an output N-Channel FET body diode exists between IN and OUT,
Si7636DP Document Number: 72768 S09-0272-Rev. G, 16-Feb-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available † Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology †Q g Optimized † New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 30V N-Channel AlphaMOS General Description Product Summary VDS I D (at VGS =10V) 85A R DS(ON) (at V GS =10V) < 2.1m Ω R DS(ON) (at V GS = 4.5V) < 3.2m Ω Application 100% UIS Tested 100% R g Tested Symbol VDS VGS V Gate-Source Voltage ±20 V Parameter Absolute Maximum Ratings T A=25°C unless otherwise noted 30V Drain-Source Voltage 30 Title: page1.EPS Created Date: 7/9/1997 5:00:25 PM